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TGA4916 primary application product description key features measured performance 7 watt ka-band hpa ? frequency range: 29 - 31 ghz ? 38.5 dbm nominal psat, 38 dbm nominal p1db ? gain: 21 db ? return losses: -10 db ? bias: vd = 6 v, idq = 3.2 a, vg = -0.7 v typical, id under rf drive = 6 a ? technology: 3mi 0.15 um power phemt ? chip dimensions: 3.86 x 5.71 x 0.05 mm ? ka-band vsat bias conditions: vd = 6 v, idq = 3200 ma, vg = -0.7 v typical 1 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. product description the triquint TGA4916 is a compact 7 watt high power amplifier for ka-band applications. the part is designed using triquint?s proven standard 0.15 um gate power phemt production process. the TGA4916 provides a nominal 38.5 dbm of output power at an input power level of 19 dbm with a small signal gain of 21 db. the part is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio . www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage 11 v vd drain voltage 6.5 v 2/ vg gate voltage range -5 to 0 v id drain current 6760 ma 2/ ig gate current range -31 to 403 ma pin input continuous wave power 29 dbm 2/ tchannel channel temperature 200 c 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause permanen t damage to the device and/or affect device lifetime. these are stress ratings only, and funct ional operation of the device at these conditions i s not implied. 2/ combinations of supply voltage, supply current, i nput power, and output power shall not exceed the maximum power dissipation listed in table iv. 2 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended operating conditions maximum power dissipation listed in table iv. symbol parameter 1/ value vd drain voltage 6 v idq drain current 3200 ma id_drive drain current under rf drive 5700 ma vg gate voltage -0.7 v 1/ see assembly diagram for bias instructions. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 table iii rf characterization table bias: vd = 6 v, idq = 3200 ma, vg = -0.7 v, typical symbol parameter test conditions minimum nominal units gain small signal gain f = 29 ghz f = 30 ghz f = 31 ghz 18 17 15 21 21 19 db irl input return loss f = 29 - 31 ghz - -10 db orl output return loss f = 29 - 31 ghz - -12 db psat saturated output power f = 29 ghz f = 30 ghz f = 31 ghz 36.5 37.0 36.5 38.5 38.5 38.5 dbm p1db output power @ 1db compression f = 29 - 31 ghz - 38 dbm gain temp coefficient f = 29 - 31 ghz - - 0.05 db / o c 3 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com gain temp coefficient f = 29 - 31 ghz - - 0.05 db / o c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 table iv power dissipation and thermal properties parameter test conditions value notes maximum power dissipation tbaseplate = 70 oc pd = 41 .45 w tchannel = 150 oc tm = 1e+6 hrs 1/ 2/ thermal resistance, jc vd = 6 v id = 3200 ma pd = 19.2 w tbaseplate = 70 oc jc = 1.93 (oc/w) tchannel = 108 oc tm = 1.8e+8 hrs thermal resistance, jc under rf drive vd = 6 v id = 6200 ma pout = 38 dbm pd = 30.97 w tbaseplate = 70 oc jc = 1.93 (oc/w) tchannel = 130 oc tm = 2e+7 hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 oc 4 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 1/ for a median life of 1e+6 hours, power dissipati on is limited to pd(max) = (150 oc ? tbase oc)/ jc. 2/ channel operating temperature will directly affec t the device median time to failure (mttf). for maximum life, it is recommended that channel temper atures be maintained at the lowest possible levels. www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 measured data bias conditions: vd = 6 v, idq = 3200 ma, vg = -0.7 v typical 5 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com -20 -16 -12 -8 -4 0 20 24 28 32 36 frequency (ghz) s11 and s22 (db) s11 s22 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 measured data bias conditions: vd = 6 v, idq = 3200 ma, vg = -0.7 v typical 6 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com 0 10 20 30 40 0 2 4 6 8 10 12 14 16 18 20 pin (dbm) pout (dbm) 28 ghz 29 ghz 30 ghz 31 ghz www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 measured data 0 3 6 9 12 15 18 21 24 27 30 0 4 8 12 16 20 24 28 32 36 40 pout (dbm) gain (db),pae (%) 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6 id (a) gain @ 30 ghz pae @ 30 ghz id @ 30 ghz bias conditions: vd = 6 v, idq = 3200 ma, vg = -0.7 v typical 7 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com pout (dbm) www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 measured data 0 10 20 30 40 50 28 28.5 29 29.5 30 30.5 31 31.5 32 frequency (ghz) otoi (dbm) pin = 6 dbm bias conditions: vd = 6 v, idq = 3200 ma, vg = -0.7 v typical 8 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com frequency (ghz) -60 -50 -40 -30 -20 -10 0 10 12 14 16 18 20 22 24 26 28 30 32 34 36 pout / tone (dbm) im3 (dbc) 28 ghz 29 ghz 30 ghz 31 ghz 32 ghz www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 electrical schematic vg_1 bot vg_1 top vg_2 bot vg_2 top vg_3 bot vg_3 top rf output rf input vd_1 bot vd_1 top vd_3 top_b vd_3 bot_b vd_3 bot_a vd_3 top_a TGA4916 vd_2 bot_a vd_2 top_b vd_2 top_a vd_2 bot_b bond pad 1 14 2 9 4 12 8 10 5 11 7 13 3 6 13 3 13 3 9 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com bias procedures bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd_top set to +6 v reduce vg to -1.5v. ensure idq ~ 0 ma vd_bottom set to +6 v turn vd_top to 0 v adjust vg more positive until idq is 3200 ma. this will be ~ vg = -0.72 v turn vd_bottom to 0 v apply rf signal to input turn vg to 0 v www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 mechanical drawing 14 11 2 5 10 1 6 12 7 3 4 13 89 10 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. units: millimeters thickness: 0.05 die x,y size tolerance: +/- 0.050 chip edge to bond pad dimensions are shown to cente r of pad ground is backside of die bond pad #1 rf input 0.125 x 0.20 bond pad #8 vd_2_top_ b 0.225 x 0.115 bond pad #2 vd_1_top 0.187 x 0.10 bond pad #9 vd_2_bot_ a 0.225 x 0.115 bond pad #3 vg_1,2,3_top 0.10 x 0.10 bond pad #10 vd_3_ bot_a 0.225 x 0.115 bond pad #4 vd_2_top_a 0.225 x 0.125 bond pad #11 vd_3_ bot_b 0.225 x 0.125 bond pad #5 vd_3_top_a 0.225 x 0.125 bond pad #12 vd_2_ bot_b 0.225 x 0.125 bond pad #6 rf output 0.125 x 0.20 bond pad #13 vg_1,2, 3_bot 0.10 x 0.10 bond pad #7 vd_3_top_b 0.225 x 0.115 bond pad #14 vd_1_ bot 0.187 x 0.10 www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 recommended assembly diagram 20 vg 1,2,3 top + bot rf in 0.1 uf f 1 0.1 uf rf out 0.1 uf 1 f vd 1,2,3 top 11 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. 1/ bond only to hatched bond pads, designated in b lue. bonding to other areas may damage mmic. 2/ for optimal performance, rf input and rf output s hould be bonded with 4 wires, using wedge bonding, or a gold ribbon. alternatively, 3 ball b onds can be used. 3/ all dc connections from 0.1 uf decoupling caps to chip should have 2 bonds. 0.1 uf vd 1,2,3 bottom 0.1 uf 0.1 uf 1 f www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4916 assembly notes component placement and adhesive attachment assembl y notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement . ? organic attachment (i.e. epoxy) can be used in low -power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. reflow process assembly notes: ? use ausn (80/20) solder and limit exposure to temp eratures above 300 c to 3-4 minutes, maximum. ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? do not use any kind of flux. ? coefficient of thermal expansion matching is criti cal for long-term reliability. ? devices must be stored in a dry nitrogen atmospher e. interconnect process assembly notes: 12 sept 2010 ? rev c triquint semiconductor: www. triquint.com (972)9 94-8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. ordering information ? ball bonding is the preferred interconnect techniq ue, except where noted on the assembly diagram. ? force, time, and ultrasonics are critical bonding parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. part package style TGA4916 gaas mmic die www.datasheet.net/ datasheet pdf - http://www..co.kr/

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